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Conference Paper
New p-Type Oxide Semiconductor with High Hole Mobility over 7 cm2/Vs Formed By Solution Process
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- Authors
- Sung Haeng Cho, Sooji Nam, Chi-Sun Hwang, Su-Jae Lee
- Issue Date
- 2018-10
- Citation
- The Electrochemical Society (ECS) Meeting 2018, pp.1-1
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- hole mobility, p-Type oxide semiconductor, solution process