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Conference Paper New p-Type Oxide Semiconductor with High Hole Mobility over 7 cm2/Vs Formed By Solution Process
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Authors
Sung Haeng Cho, Sooji Nam, Chi-Sun Hwang, Su-Jae Lee
Issue Date
2018-10
Citation
The Electrochemical Society (ECS) Meeting 2018, pp.1-1
Publisher
Electrochemical Society (ECS)
Language
English
Type
Conference Paper
KSP Keywords
hole mobility, p-Type oxide semiconductor, solution process