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Journal Article
고온 동작용 SiC CMOS 소자/공정 및 집적 회로 기술 동향
- Issue Date
- 2018-12
- Citation
- 전자통신동향분석, v.33, no.6, pp.1-11
- ISSN
- 1225-6455
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- Korean
- Type
- Journal Article
- Abstract
- Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.
- KSP Keywords
- CMOS devices, Electronic systems, Geothermal power plants, High-Temperature Applications, Integrated circuit, Silicon On Insulator(SOI), Technology trends, bulk silicon, industrial applications, oil and gas industry, operating temperature
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
