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Conference Paper
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
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- Authors
- Zin-Sig Kim, Hyung-Seok Lee, Sung-Bum Bae, Eunsoo Nam, Jong-Won Lim
- Issue Date
- 2019-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2019, pp.618-619
- Language
- English
- Type
- Conference Paper