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학술지 A 1-W Ka-band Power Amplifier using 0.15-μm InGaAs/GaAs E-mode pHEMT Technology
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저자
이희동, 박정수, 공선우, 김광선, 이광천, 박봉혁, 김정근
발행일
201907
출처
Microwave and Optical Technology Letters, v.61 no.7, pp.1706-1711
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.31828
협약과제
18HF1500, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
초록
This article presents a 1-W Ka-band power amplifier using 0.15-μm InGaAs/GaAs enhancement-mode pHEMT technology. We have introduced a method to obtain the required output power through the characteristics of the unit transistor provided by the manufacturer. At first, the PA circuit is designed to effectively combine the output signals of eight unit transistors. From the measurement results, 28.5 dBm output was obtained at 28 GHz and the maximum efficiency was reached to 25%. In order to achieve 1-W output power, two power amplifiers were connected in parallel using T-junction line combiner. Finally, an output power of 30.1 dBm was obtained. At the same time, the PA efficiency is 14.1%. As a result of linearity verification, we confirmed that this power amplifier has the ACLR characteristics of less than ?닋30 dBc up to 23.3 dBm output.
키워드
5G, millimeter wave, MMIC, pHEMT, power amplifier
KSP 제안 키워드
28 GHz, Band Power, E-mode, Output power, PA efficiency, T-junction, enhancement-mode, ka-band, maximum efficiency, measurement results, millimeter wave(mmWave)