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Journal Article 전자 소자 기반 테라헤르츠 반도체 기술 동향
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Authors
강동우, 구본태
Issue Date
2018-12
Citation
전자통신동향분석, v.33, no.6, pp.34-40
ISSN
1225-6455
Publisher
한국전자통신연구원
Language
Korean
Type
Journal Article
DOI
https://dx.doi.org/10.22648/ETRI.2018.J.330604
Abstract
Traditionally, many researchers have conducted research on terahertz technology utilizing optical devices such as lasers. However, nanometer-scale electronic devices using silicon or III-V compound semiconductors have received significant attention regarding the development of a terahertz system owing to the rapid scaling down of devices. This enables an operating frequency of up to approximately 0.5 THz for silicon, and approximately 1 THz for III-V devices. This article reviews the recent trends of terahertz monolithic integrated circuits based on several electronic devices such as CMOS, SiGe BiCMOS, and InP HBT/HEMT, and a particular quantum device, an RTD.
KSP Keywords
III-V compound semiconductors, III-V devices, InP HBT, Nanometer-scale, Operating frequency, Optical devices, Quantum devices, Recent Trends, SiGe BiCMOS, Terahertz Technology, electronic devices
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
Type 4: