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Conference Paper
Fabrication of 1200V 100A class 4H-SiC Trench Gate MOSFET according to Trench Shape
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- Authors
- Sang Gi Kim, Jong Il Won, Weon Chan Kim, Jae Jin Song, Dong Hyun Yun, Min Jae Kang, Tae Moon Roh
- Issue Date
- 2019-03
- Citation
- SiC 반도체 컨퍼런스 2019, pp.31-31
- Publisher
- 한국전기전자재료학회
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- 4H-SiC, Trench shape, trench gate