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Conference Paper Fabrication of 1200V 100A class 4H-SiC Trench Gate MOSFET according to Trench Shape
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Authors
Sang Gi Kim, Jong Il Won, Weon Chan Kim, Jae Jin Song, Dong Hyun Yun, Min Jae Kang, Tae Moon Roh
Issue Date
2019-03
Citation
SiC 반도체 컨퍼런스 2019, pp.31-31
Publisher
한국전기전자재료학회
Language
English
Type
Conference Paper
KSP Keywords
4H-SiC, Trench shape, trench gate