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Conference Paper
Fabrication and Characterication of Using Room Temperature Implantation 4H-SiC Schottky Barrier Diode
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- Authors
- Doohyung Cho, Won Jong Il, Park Jong-Moon, Park Kun Sik
- Issue Date
- 201903
- Source
- SiC 반도체 컨퍼런스 2019, pp.57-57
- Project Code
- 16ZB1600, Development of SiC based trench type next generation power device, Kim Sang Gi
- KSP Keywords
- 4H-SiC, Schottky barrier