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Conference Paper 상온 이온 주입 공정을 이용한 4H-SiC Schottky Barrier Diode의 제조 및 특성 분석
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Authors
조두형, 원종일, 박종문, 박건식
Issue Date
2019-03
Citation
SiC 반도체 컨퍼런스 2019, pp.57-57
Language
Korean
Type
Conference Paper
Project Code
16ZB1600, Development of SiC based trench type next generation power device, Kim Sang Gi
KSP Keywords
4H-SiC, Schottky barrier