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학술지 High-performance Fab-compatible Processed Near-infrared Organic Thin-film Photodiode with 3.3×1012 Jones Detectivity and 80% External Quantum Efficiency
Cited 1 time in scopus
저자
주철웅, 김주희, 문제현, 이강미, 피재은, 강승열, 안성덕, 박영삼, 정대성
발행일
201907
출처
Organic Electronics, v.70, pp.101-106
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2019.04.005
협약과제
19HB1500, 디스플레이 일체형 투명 틀렉서블 복합 생체인식 디바이스 핵심기술 개발, 안성덕
초록
© 2019 Elsevier B.V. A high-performance small molecular near-infrared (NIR) organic photodiode (OPD) including indium (III) phthalocyanine chloride (ClInPc):C60 bulk heterojunction as a photoactive layer is fabricated by using only vacuum processes that are highly compatible with common manufacturing processes used in the photodiode industry. To satisfy simultaneously sufficient absorption of NIR photons, efficient charge extraction, and suppression of undesired dark current injection, the thickness of each constituent layer of NIR-OPD is carefully adjusted. Optical simulations on absorption profiles of NIR photons within a layered OPD structure combined with dark current analyses suggest the optimized device architecture of indium tin oxide/molybdenum oxide/ClInPc:C60 (120 nm)/C60/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline/aluminum. Due to the sufficiently thin active layer thickness, a detectivity (D*) spectrum of the optimized OPD well reflects the absorption feature of ClInPc:C60, with a remarkable detection band at the NIR region with a peak dark-current-based D* of 4.5 × 1012 Jones and a maximum noise-current-based D* of 3.3 × 1012 Jones. Furthermore, a low noise equivalent power of 6.13 × 10?닋14 W/Hz0.5, wide linear dynamic range of 77.2 dB, and fast enough temporal response with a -3dB frequency of 2.85 kHz are demonstrated, that can be ascribed to not only the excellent light absorbing-ability of ClInPc:C60 but also the well-designed diode architecture with effectively suppressed dark current even in a thin active film thickness of 120 nm.
키워드
Fab-compatible, NIR photodetector, Organic photodiode, Thin film, Vacuum process
KSP 제안 키워드
10-phenanthroline(BCP), 20 nm, 7-diphenyl-1, 9-dimethyl-4, Absorption features, Active layer thickness, Current injection, Dark Current, Detection band, External Quantum Efficiency, High performance