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Journal Article
Photodetector Based on Multilayer SnSe2 Field Effect Transistor
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- Authors
- Moonshik Kang, Servin Rathi, Inyeal Lee, Lijun Li, Muhammad Atif Khan, Dongsuk Lim, Yoontae Lee, Jinwoo Park, Anh Tuan Pham, Anh Tuan Duong, Sunglae Cho, Sun Jin Yun, Gil-Ho Kim
- Issue Date
- 2018-06
- Citation
- Journal of Nanoscience and Nanotechnology, v.18, no.6, pp.4243-4247
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate a high-performance photodetector with multilayer tin diselenide (SnSe 2 exfoliated from a high-quality crystal which was synthesized by the temperature gradient growth method. This SnSe 2 photodetector exhibits high photoresponsivity of 5.11 × 10 5 A W -1 and high specific detectivity of 2.79 × 10 13 Jones under laser irradiation ( = 450 nm). We also observed a reproducible and stable time-resolved photoresponse to the incident laser beam from this SnSe 2 photodetector, which can be used as a promising material for future optoelectronic applications.
- KSP Keywords
- Field-effect transistors(FETs), High performance, High-quality, Laser beams, Optoelectronic applications, SnSe 2, Temperature gradient growth method, Time-resolved, high photoresponsivity, laser irradiation, specific detectivity