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Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
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- Authors
- Zin-Sig Kim, Hyung-Seok Lee, Sung-Bum Bae, Eunsoo Nam, Jong-Won Lim
- Issue Date
- 2019-10
- Citation
- Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructure have been widely studied for high-frequency and/or high-power application. Widely distributed substrates for the high performance of RF applications are presently AlGaN/GaN on SiC, and those for high power performance are AlGaN/GaN on Si. Because the thermal conductivity of CVD diamond substrates is as high as 12 W/cm • K, devices on AlGaN/GaN on CVD diamond are one of the excellent alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on SiC is 4.9 W/cm • K, and that of AlGaN/GaN on Si is 1.3 W/cm • K. In this work, we report the fabrication of SBD devices with 163.8 mm Schottky channel length. We also compared the thermal properties of the fabricated large scale SBD devices on different substrates.
- KSP Keywords
- AlGaN/GaN heterostructure, AlGaN/GaN-on-Si, Channel Length, Chemical Vapor Deposition, Cvd diamond, Different substrates, GaN on SiC, High frequency(HF), High performance, High power applications, High-electron mobility transistor(HEMT)