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Journal Article
2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성
- Issue Date
- 2019-04
- Citation
- 한국전자파학회논문지, v.30, no.4, pp.282-285
- ISSN
- 1226-3133
- Publisher
- 한국전자파학회 (KIEES)
- Language
- Korean
- Type
- Journal Article
- Abstract
- A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current(Idss), an extrinsic transconductance(gm) of 1,090 mS/mm and a threshold voltage(Vth) of −0.65 V. The fT and fmax obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).
- KSP Keywords
- 60 GHz, DC output, Drain current, Gate recess, High electron mobility transistor(HEMT), Microwave monolithic integrated circuits(MMIC), T-shaped gate, Two-Step, W-band, metamorphic high electron mobility transistor(mHEMT), microwave integrated circuit
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
(CC BY NC)
