상세정보
학술지
Analysis of Vertical Phase Distribution in Reactively Sputtered Zinc Oxysulfide Thin Films
- 발행일
- 201908
- 출처
- Applied Surface Science, v.486, pp.555-560
- ISSN
- 0169-4332
- 출판사
- Elsevier
- 협약과제
- 19JB1900, 무독성 버퍼층을 갖는 다색 플렉서블 박막 태양전지 기술 개발, 정용덕
- 초록
- Zinc oxysulfide (Zn(O,S)) is widely used for photovoltaic and optoelectronic devices because its electronic properties are tunable with adjustments to the S-to-O composition ratio. Zn(O,S) thin films used in devices are typically assumed to have constant S-to-O composition ratios across their thicknesses. However, S-to-O composition ratio gradients, and thus electronic property variations along the vertical direction, can be naturally induced. Such gradients can enhance device performance. In this work, we analyzed the S-to-O composition ratios along the thickness directions of Zn(O,S) thin films deposited at a fixed O2 gas flux. Natural O enrichment was observed near the bottom of the film, attributed to the highly reactive nature of the sputtering process. By increasing O2 gas flux during sputtering, more compositionally uniform thin films were obtained. We suggest that non-uniform phase distribution in the depth direction could be considered for achieving desired composition ratios when depositing Zn(O,S) thin films using reactive sputtering.
- KSP 제안 키워드
- Composition ratio, Electronic properties, Non-uniform, Phase distribution, Reactive sputtering, Reactively sputtered, Zinc oxysulfide, device performance, optoelectronic devices, sputtering process, thin film(TF)