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학술대회 The New Route for Realization of 1μm-pixel-pitch High Resolution Displays
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저자
최지훈, 양종헌, 피재은, 황치영, 김용해, 김기현, 김희옥, 황치선
발행일
201905
출처
Society for Information Display (SID) International Symposium 2019, pp.319-321
DOI
https://dx.doi.org/10.1002/sdtp.12920
협약과제
19MR1400, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
초록
We present a new pixel structure to realize the lftm-pixel-pitch display. This structure is based on the conventional back-channel etched thin-film transistor (TFT), but all layers except the horizontal gate line are vertically stacked on the embedded data line, enabling the implementation of high resolution display panels. The vertically-stacked TFT with Ifim-channel length shows a high field effect mobility over SO cm2/Vs, low subthreshold slope of 78 mV/decade. It also shows a high uniform electrical characteristic over the entire 6-inch wafer. The development of new architecture enables the implementation of a lftm-pixel-pitch high resolution displays such as digital hologram.
KSP 제안 키워드
Channel Length, Data line, Digital hologram, Gate line, High-resolution, Pixel structure, Subthreshold slope(SS), Thin-Film Transistor(TFT), electrical characteristics, high field-effect mobility, thin film(TF)