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학술지 Thermally Evaporated Amorphous InZnO Thin Film Applicable to Transparent Conducting Oxide for Solar Cells
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이우정, 조대형, 김이도, 최명운, 최진철, 정용덕
Journal of Alloys and Compounds, v.806, pp.976-982
19JB1900, 무독성 버퍼층을 갖는 다색 플렉서블 박막 태양전지 기술 개발, 정용덕
In recent years, amorphous InZnO (a-IZO) film gets recognition for the possibility as a transparent conducting oxide (TCO) layer with outstanding its optical and electrical properties in photovoltaic devices. Generally, the sputtering technique is normally used to deposit a-IZO film, which suffers from plasma damage exerting a negative influence on device performance. Here, we suggest an alternative to deposit a-IZO film with a thermal evaporation technique using a simply customized system to compensate defects by plasma damage. Thermally grown IZO films by controlling two variables of Zn rate and substrate temperature show the distinguishable characters in terms of transparency, conductivity and crystalline structure with a substantial change of Zn content in In1-xZnxO. Zn incorporation in IZO film is considered as a critical key to determining the crystal structure and IZO film quality. In the thermal evaporation system, phase transition occurs from crystalline to amorphous; the IZO film indicates the superior property in the amorphous phase than crystalline structure. We acquired the optimized IZO film with amorphous phase in the relative concentration of In0.73Zn0.27O grown at 200 °C. To demonstrate the feasibility of a-IZO film as a TCO layer, Cu(In,Ga)Se2 solar cell was practically fabricated, which shows excellent performance. It is attributed to the absence of plasma damage during deposition of the a-IZO film, proved by the decrease of shunt resistance in the solar cell.
KSP 제안 키워드
Amorphous InZnO(a-IZO), Amorphous Phase, Crystalline structure, Evaporation system, Field effect transistors(Substrate temperature), Optical and electrical properties, Phase transition, Shunt Resistance, Solar Cells, Thermal evaporation technique, Thermally evaporated