상세정보
학술지
Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation
- 발행일
- 201204
- 출처
- ETRI Journal, v.34 no.2, pp.280-283
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- 초록
- By inserting H 2O treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS. © 2012 ETRI.
- KSP 제안 키워드
- Atomic Layer Deposition, Channel layer, Experiment results, Improved stability, Negative bias stress, Oxygen vacancy concentration, Thin-Film Transistor(TFT), Turn-on voltage, Voltage shift, Working pressure, ZnO layer