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Conference Paper
Fabrication and Characterization of “See-Through” Nonvolatile Memory Transistors Using Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) and Transparent Oxide Semiconductor
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- Authors
- S. M. Yoon, S. Yang, C. W. Byun, S. H. Ko Park, D. H. Cho, S. W. Jung, O. S. Kwon, C. S. Hwang
- Issue Date
- 2010-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2010, pp.61-62
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Fabrication and characterization, Nonvolatile memory(NVM), Vinylidene fluoride(VDF), nonvolatile memory transistors, transparent oxide semiconductor, vinylidene fluoride-co-hexafluoropropylene(Poly)