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학술대회
Fabrication and Characterization of “See-Through” Nonvolatile Memory Transistors Using Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) and Transparent Oxide Semiconductor
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- 발행일
- 201002
- 출처
- 한국 반도체 학술 대회 (KCS) 2010, pp.61-62
- 협약과제
- 09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- KSP 제안 키워드
- Non-Volatile Memory(NVM), fabrication and characterization, nonvolatile memory transistors, transparent oxide semiconductor, vinylidene fluoride-co-hexafluoropropylene(Poly)