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Journal Article
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
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- Authors
- Jeong-Gil Kim, Seung-Hyeon Kang, Lukasz Janicki, Jun-Hyeok Lee, Jeong-Min Ju, Kyung-Wan Kim, Yong-Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Jung-Hee Lee
- Issue Date
- 2019-02
- Citation
- Solid-State Electronics, v.152, pp.24-28
- ISSN
- 0038-1101
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- AlGaN/GaN heterostructures were successfully grown with the AlIn(Ga)N back barrier at 900 °C. However, the atomic composition of the AlIn(Ga)N layer was strongly dependent on the growth pressure, which resulted in a different lattice constant of the layer. The AlIn(Ga)N back barrier grown at 400 torr was almost lattice-matched to GaN layer. The AlGaN/GaN heterostructures with 10 and 15 nm-thick AlIn(Ga)N back barrier exhibited improved 2-DEG properties, compared to those of the conventional AlGaN/GaN heterostructure without the back barrier. The high electron mobility transistors (HEMTs) fabricated on the AlGaN/GaN heterostructure with a 15 nm-thick AlIn(Ga)N back barrier exhibited a very low off-state leakage current of ~2 × 10?닋7 A/mm which is about 1 order lower in magnitude than the value of the device without the back barrier. The AlIn(Ga)N back barrier is a promising candidate as an alternative to conventional AlGaN and InGaN back barrier.
- KSP Keywords
- 5 nm, AlGaN/GaN heterostructure, Atomic composition, Back barrier, Growth pressure, High-electron mobility transistor(HEMT), Lattice constant, Lattice matched, Leakage Current, n layer, off-state leakage