상세정보
학술지
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
- 발행일
- 201902
- 출처
- Solid-State Electronics, v.152, pp.24-28
- ISSN
- 0038-1101
- 출판사
- Elsevier
- 협약과제
- 18DB2600, GaN RF 전력증폭 소자 설계 개발, 임종원
- 초록
- AlGaN/GaN heterostructures were successfully grown with the AlIn(Ga)N back barrier at 900 °C. However, the atomic composition of the AlIn(Ga)N layer was strongly dependent on the growth pressure, which resulted in a different lattice constant of the layer. The AlIn(Ga)N back barrier grown at 400 torr was almost lattice-matched to GaN layer. The AlGaN/GaN heterostructures with 10 and 15 nm-thick AlIn(Ga)N back barrier exhibited improved 2-DEG properties, compared to those of the conventional AlGaN/GaN heterostructure without the back barrier. The high electron mobility transistors (HEMTs) fabricated on the AlGaN/GaN heterostructure with a 15 nm-thick AlIn(Ga)N back barrier exhibited a very low off-state leakage current of ~2 × 10?닋7 A/mm which is about 1 order lower in magnitude than the value of the device without the back barrier. The AlIn(Ga)N back barrier is a promising candidate as an alternative to conventional AlGaN and InGaN back barrier.
- KSP 제안 키워드
- 5 nm, AlGaN/GaN heterostructure, Atomic composition, Back barrier, Growth pressure, High electron mobility transistor(HEMT), Lattice constants, Lattice matched, Leakage current, Off-state leakage, n layer