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Detail
Journal Article
차세대 GaN RF 전력 증폭 소자 및 집적 회로 기술 동향
- Issue Date
- 2019-10
- Citation
- 전자통신동향분석, v.34, no.5, pp.71-80
- ISSN
- 1225-6455
- Publisher
- 한국전자통신연구원
- Language
- Korean
- Type
- Journal Article
- Abstract
- Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.
- KSP Keywords
- Band Power, Channel structure, Current direction, Gallium Arsenide, Gallium nitride (gan), High Power density, High Voltage, High electron mobility, High-speed devices, Ku-Band, Length scaling
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
