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Journal Article
Role of Hydrazine in the Enhanced Growth of Zinc Sulfide Thin Films using Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cell Application
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- Authors
- Jeha Kim, Cha Ran Lee, Vinaya Kumar Arepalli, Sung-Jun Kim, Woo-Jung Lee, Yong-Duck Chung
- Issue Date
- 2020-01
- Citation
- Materials Science in Semiconductor Processing, v.105, pp.1-8
- ISSN
- 1369-8001
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the hydrazine effect on the physical characteristics of zinc sulfide (ZnS) thin films on both the soda-lime glass substrate and the Cu(In,Ga)Se2 (CIGS) absorber layer as a function of its relative content rc with respect to ammonia as well as the deposition time td in the chemical bath deposition. As the rc varied from 0 to 1.39, all the deposited ZnS films using hydrazine as a secondary complexing agent showed nearly identical characteristics of amorphous structure with the composition of [S/(S + O)] ~ 0.32 and the direct energy bandgap of Eg = 3.54??3.75 eV. However, they exhibited a strong dependence of light transmission on the longer deposition times td (?돟70 min), due to the enhancement of the areal density of in-plane grains. By applying the ZnS buffer on top of the CIGS, the heterojunction device showed the best solar cell performance with η = 12.03%, Voc = 0.549 V, Jsc = 32.92 mA/cm2, FF = 66.7% from the ZnS buffer grown at rc = 0.28 and td = 30 min. When compared to only ammonia, the relative hydrazine was found to play a key role in the deposition of ZnS to expedite the in-plane grain growth by 6 times accompanied both with a reduction of in-plane grain size and a denser packing density.
- KSP Keywords
- Areal density, Chemical bath deposition(CBD), Complexing agent, Deposition time, Energy band gap, Glass substrate, Grain Size, Heterojunction device, In-plane, Key role, Physical characteristics