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Journal Article
The new route for realization of 1‐μm‐pixel‐pitch high‐resolution displays
- Authors
- Ji Hun Choi, Jong-Heon Yang, Jae-Eun Pi, Chi-Young Hwang, Yong-Hae Kim, Gi Heon Kim, Hee-Ok Kim, Chi-Sun Hwang
- Issue Date
- 2019-08
- Citation
- Journal of the Society for Information Display, v.27, no.8, pp.487-496
- ISSN
- 1071-0922
- Publisher
- Society for Information Display (SID)
- Language
- English
- Type
- Journal Article
- Abstract
- A new pixel structure for the realization of a 1-μm-pixel-pitch display was developed. This structure, named vertically stacked thin-film transistor (VST), was based on the conventional back-channel etched thin-film transistor (TFT), but all the layers except the horizontal gate line were vertically stacked on the embedded data line, enabling the implementation of high-resolution display panels. The VST device with a channel length of 1혻μm showed a high field effect mobility of more than 50혻cm2/Vs and low subthreshold slope of 78혻mV per decade. It also shows a high uniform electrical characteristic over the entire 6-in. wafer. The development of a new pixel architecture is expected to enable the implementation of 1-μm-pixel-pitch high-resolution displays such as spatial light modulators for digital holograms.
- KSP Keywords
- Channel Length, Data line, Electrical characteristics, Gate line, High-resolution displays, Pixel structure, Spatial light modulator(SLM), Subthreshold slope(SS), Thin-Film Transistor(TFT), high field-effect mobility, thin film(TF)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
