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학술지 The New Route for Realization of 1-μm-pixel-pitch High-resolution Displays
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저자
최지훈, 양종헌, 피재은, 황치영, 김용해, 김기현, 김희옥, 황치선
발행일
201908
출처
Journal of the Society for Information Display, v.27 no.8, pp.487-496
ISSN
1071-0922
출판사
Society for Information Display (SID)
DOI
https://dx.doi.org/10.1002/jsid.821
협약과제
19MR1400, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
초록
A new pixel structure for the realization of a 1-μm-pixel-pitch display was developed. This structure, named vertically stacked thin-film transistor (VST), was based on the conventional back-channel etched thin-film transistor (TFT), but all the layers except the horizontal gate line were vertically stacked on the embedded data line, enabling the implementation of high-resolution display panels. The VST device with a channel length of 1혻μm showed a high field effect mobility of more than 50혻cm2/Vs and low subthreshold slope of 78혻mV per decade. It also shows a high uniform electrical characteristic over the entire 6-in. wafer. The development of a new pixel architecture is expected to enable the implementation of 1-μm-pixel-pitch high-resolution displays such as spatial light modulators for digital holograms.
KSP 제안 키워드
Channel Length, Data line, Gate line, High-resolution displays, Pixel structure, Spatial light modulator(SLM), Subthreshold slope(SS), Thin-Film Transistor(TFT), electrical characteristics, high field-effect mobility, thin film(TF)