ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
Cited 5 time in scopus Download 115 time Share share facebook twitter linkedin kakaostory
저자
황인태, 장규원, 김현정, 이상흥, 임종원, 양진모, 권호상, 김현석
발행일
201909
출처
Applied Sciences, v.9 no.17, pp.1-13
ISSN
2076-3417
출판사
MDPI
DOI
https://dx.doi.org/10.3390/app9173610
협약과제
18DB2600, GaN RF 전력증폭 소자 설계 개발, 임종원
초록
This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.
KSP 제안 키워드
5 nm, AND gate, Breakdown voltage(BDV), Channel layer, DC Characteristics, GaN-Based, Gas channel, High electron mobility transistor(HEMT), Lattice temperature, Layer composition, Metal-insulator-semiconductor(MIS)
본 저작물은 크리에이티브 커먼즈 저작자 표시 (CC BY) 조건에 따라 이용할 수 있습니다.
저작자 표시 (CC BY)