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Journal Article
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
- Authors
- In-Tae Hwang, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon, Hyun-Seok Kim
- Issue Date
- 2019-09
- Citation
- Applied Sciences, v.9, no.17, pp.1-13
- ISSN
- 2076-3417
- Publisher
- MDPI
- Language
- English
- Type
- Journal Article
- Project Code
- 18DB2600, Development of GaN RF device, Jong-Won Lim
- Abstract
- This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.
- KSP Keywords
- 5 nm, AND gate, Breakdown voltage(BDV), Channel layer, DC Characteristics, GaN-Based, Gas channel, High electron mobility transistor(HEMT), Lattice temperature, Layer composition, Metal-insulator-semiconductor(MIS)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
