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Journal Article
Influence of Hydrogen Incorporation on Conductivity and Work Function of VO2 Nanowires
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- Authors
- Jae-Eun Kim, Jung Yeol Shin, Hyun-Seok Jang, Jun Woo Jeon, Won G. Hong, Hae Jin Kim, Junhee Choi, Gyu-Tae Kim, Byung Hoon Kim, Jonghyurk Park, Young Jin Choi, Jeong Young Park
- Issue Date
- 2019-03
- Citation
- Nanoscale, v.11, no.10, pp.4219-4225
- ISSN
- 2040-3364
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- We report improved conductance by reducing the work function via incorporation of hydrogen into VO 2 nanowires. The VO 2 nanowires were prepared using the chemical vapor deposition method with V 2 O 5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO 2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H 2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO 2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO 2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.
- KSP Keywords
- Chemical vapor deposition method, Fermi level, H 2, Hydrogen atoms, Hydrogen incorporation, Kelvin Probe force microscopy, Lattice constants, Raman spectroscopy, Silicon substrate, VO 2, Work Function