ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Facile Fabrication of Self-assembled ZnO Nanowire Network Channels and Its Gate-controlled UV Detection
Cited 13 time in scopus Download 15 time Share share facebook twitter linkedin kakaostory
Authors
Hochan Chang, Do Hoon Lee, Hyun Soo Kim, Jonghyurk Park, Byung Yang Lee
Issue Date
2018-12
Citation
Nanoscale Research Letters, v.13, pp.1-9
ISSN
1556-276X
Publisher
Springer
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1186/s11671-018-2774-0
Abstract
We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300혻°C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175혻cm2혻V?닋 1혻s?닋 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7혻V.
KSP Keywords
FET devices, Facile fabrication, Field-effect transistors(FETs), Gate-controlled, Molecular surface, N-type, NW network, Photoresponsive behavior, UV detection, UV light, UV sensors
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
CC BY