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학술지 Low-Crosstalk Silicon Nitride Arrayed Waveguide Grating for the 800-nm Band
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저자
박재규, 주지호, 김경옥, 유성욱, 김상기
발행일
201907
출처
IEEE Photonics Technology Letters, v.31 no.14, pp.1183-1186
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2019.2922425
초록
We present a silicon nitride (SixNy) arrayed waveguide grating (AWG). Crosstalk in this AWG was reduced by decreasing the phase error in a multimode arrayed waveguide (WG) at center wavelength of 838 nm. 8-channel SixNy AWGs using arrayed WGs with double-etched inverse-tapered WG structure and cross-sectional area of 1.5 × 1.5 μm2 were fabricated. The AWG exhibited less than -29.6-dB crosstalk with 0.43-dB insertion loss for transverse electric (TE) polarization.
KSP 제안 키워드
Center wavelength, Cross-sectional area(CSA), Silicon Nitride, Transverse Electric, arrayed waveguide grating(AWG), insertion loss, phase error