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학술지 All-oxide Thin-film Transistors with Channels of Mixed InOx-ZnOy Formed by Plasma-enhanced Atomic Layer Deposition Process
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이정무, 이환재, 피재은, 양종헌, 이정훈, 안성덕, 강승열, 문제현
Journal of Vacuum Science and Technology A, v.37 no.6, pp.1-7
American Vacuum Society (AVS)
19HB1500, 디스플레이 일체형 투명 틀렉서블 복합 생체인식 디바이스 핵심기술 개발, 안성덕
To make high mobility oxide thin-film transistors (TFTs) for transparent large displays, the authors fabricated all-oxide TFTs having amorphous mixed-oxide channels of indium oxide (InOx) and zinc oxide (ZnOy). Liquid precursors of 3-(dimethyl amino)propyl-dimethyl indium (C7H18InN) and diethyl zinc [(C2H5)2Zn] and oxygen plasma were used to form mixed-oxide channels by plasma-enhanced atomic layer deposition (ALD). The authors varied the cycle ratio of InOx and ZnOy to deduce the optimal ratio of InOx:ZnOy for high performance TFTs. X-ray photoelectron spectroscopy analyses were performed to reveal the decrease in the oxygen-deficient state as the fraction of InOx increases. At a deposition cycle ratio of InOx:ZnOy = 2:1, the TFT demonstrated the best performance of field effect mobility of 30.3 cm2/V s, subthreshold of 0.14 V/decade, and Ion/Ioff ratio of 3.1 × 109. By adjusting the relative cycles of different oxides in an ALD process, one may obtain the desired mixed-oxide channel TFT properties, which is not readily possible in the sputtering process. By varying the compositions of the oxide channel layer, the latitude of device fabrication could be widening, thereby enabling performance customization.
KSP 제안 키워드
ALD process, Best performance, Channel layer, Cycle ratio, High Mobility, High performance, Liquid precursor, Mixed oxides, Oxide TFTs, Oxide channel, Plasma-enhanced atomic layer deposition