본 논문에서는 국내 최초로 항복전압 480 V 이상을 갖는 산화갈륨 MOSFETs을 시연하였다. Si-도핑된 β-Ga2O3 채널층은 Fe-도핑된 β-Ga2O3 (010) 기판위에 분자선 증착법 (MBE)으로 성장되었다. 게이트 길이 (Lg) 2 µm, 게이트-드레인 간격 (Lgd) 5 µm 소자의 경우 핀치오프 전압(Vp) 이 -6.1 V, 게이트 전압 (Vgs) -10 V 에서 항복전압이 -482 V, 드레인 누설전류 4.7 nA, 온/오프 전류비는 5.3x105으로 평가되었다. 이러한 소자의 특성은 산화갈륨 전자소자가 전기자율주행차, 철도, 태양광 및 신재생 에너지 및 산업과 같은 차세대 고전력 소자응용에 응용이 유망할 것으로 생각된다.
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