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Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process
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- Authors
- Hye-Won Yun, Ho Kun Woo, Soong Ju Oh, Sung-Hoon Hong
- Issue Date
- 2020-02
- Citation
- Current Applied Physics, v.20, no.2, pp.288-292
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.
- KSP Keywords
- Bending radius, Compressive stress, Exchange process, Flexible application, Flexible electronics, Low temperature(LT), Nickel oxide(NiO), Resistive memory, Switching properties, bending cycles, flexible memory