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학술지 Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process
Cited 2 time in scopus
저자
윤혜원, 우호균, 오승주, 홍성훈
발행일
202002
출처
Current Applied Physics, v.20 no.2, pp.288-292
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2019.11.019
협약과제
18PB5200, 나노금형기반 맞춤형 융합제품 상용화지원센터 구축 (RFID 나노융합센서), 홍성훈
초록
© 2019 Korean Physical Society In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.
키워드
Flexible ReRAM, Low-temperature process, NiO nanocrystal, Solution-process
KSP 제안 키워드
Bending radius, Compressive stress, Exchange process, Flexible application, Flexible electronics, Low temperature(LT), Low-temperature process, Nickel oxide(NiO), Resistive memory, Switching properties, bending cycles