상세정보
학술지
Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process
- 발행일
- 202002
- 출처
- Current Applied Physics, v.20 no.2, pp.288-292
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 18PB5200, 나노금형기반 맞춤형 융합제품 상용화지원센터 구축 (RFID 나노융합센서), 홍성훈
- 초록
- In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 °C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.
- KSP 제안 키워드
- Bending radius, Compressive stress, Exchange process, Flexible application, Flexible electronics, Low temperature(LT), Nickel oxide(NiO), Resistive memory, Switching properties, bending cycles, flexible memory