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Conference Paper
Integrated Single Photon Source of InAs Quantum Dot with Silicon-based Photonic Circuits
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- Authors
- Young-Ho Ko, Won Seok Han, Kap-Joong Kim, Byung-Seok Choi, Kyu Young Kim, Je-Hyung Kim, Chun Ju Youn, Jong-Hoi Kim, Jung Jin Ju
- Issue Date
- 2019-06
- Citation
- Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference (CLEO/Europe-EQEC) 2019, pp.1-1
- Language
- English
- Type
- Conference Paper
- Abstract
- A single photon source is an essential element for the photonic quantum information applications including the quantum communication, the quantum simulation, and the quantum computation [1,2]. Semiconductor quantum dots (QDs) have been widely considered as a promising platform for the single photon source due to their various advantages of manipulation and integration with various photonic elements. To realize the on-chip quantum devices, there have been numerous effort to integrate III-V QDs with silicon-based photonic circuits [3,4]. However the self-assembled QDs have inherent drawbacks of irregular size distribution and random position. To overcome these drawbacks, various methods have been studied to obtain the site-controlled QDs such as the pyramid, the inverted pyramid, the nanohole, and the spatially selective H incorporation techniques [5]. In this study, we obtained site-controlled InAs QDs by the selective-area growth (SAG) method and integrated single photon source with the silicon-based photonic circuits through the micro-transfer technique.
- KSP Keywords
- Essential element, III-V, InAs QDs, InAs quantum dots, Inverted pyramid, Photonic circuit, Quantum Computation, Quantum Information, Quantum device, Quantum dot(Qdot), Quantum simulation