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GaN Device Technology for High Voltage and RF Power Application
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- Authors
- Hyung-Seok Lee, Sung-Bum Bae, Zin-Sig Kim, Jeong-Jin Kim, Jong-Won Lim, Eun Soo Nam
- Issue Date
- 2019-05
- Citation
- 한러 과학기술의 날 2019, pp.1-1
- Publisher
- 국가과학기술연구회
- Language
- English
- Type
- Conference Paper
- Abstract
- GaN semiconductors have received considerable attention during the last decade due to their outstanding properties for opto-electronic, high frequency, and high power applications [1]. The direct and tunable bandgap of this semiconductor family allows the development of short wavelength optoelectronic devices, impossible to fabricate with Si and other semiconductors [2], [3]. At the same time, the frequency performance of transistors made of these materials is quickly increasing. Transistors with current and power gain cut-off frequencies in excess of 300 GHz have been recently demonstrated. In addition to this high frequency performance, the high two-dimensional electron gas (2DEG) density and critical electric field of AlGaN/GaN allow a 10-fold increase in the output power density of GaN RF power amplifiers and high voltage electronics, when compared to state-of-the-art GaAs and Si circuits. In this presentation, we will review recent GaN device technology for power and RF applications of ETRI.The better power and frequency handling capabilities, and higher thermal conductivity of wide bandgap semiconductors will give them significant advantage over classic semiconductors. Diamond with the highest thermal conductivity among broadband semiconductors is the most promising material as a thermal diffusion substrate for RF / power devices. For example, despite the maturity of GaN device technology, the heat generated during device operation is a limiting factor that maximizes the performance of GaN devices [3,4], but it can be overcome with high thermal conductivity diamond [3]. This presentation will also present recent research and development trends of GaN-on-Diamond semiconductor electronic devices.
- KSP Keywords
- 300 GHz, Development trends, Diamond semiconductor, GaN device, GaN semiconductor, GaN-on-diamond, High Frequency(HF), High Voltage, High power applications, Limiting factor, Output power density