GaN semiconductors have received considerable attention during the last decade due to their outstanding properties for opto-electronic, high frequency, and high power applications [1]. The direct and tunable bandgap of this semiconductor family allows the development of short wavelength optoelectronic devices, impossible to fabricate with Si and other semiconductors [2], [3]. At the same time, the frequency performance of transistors made of these materials is quickly increasing. Transistors with current and power gain cut-off frequencies in excess of 300 GHz have been recently demonstrated. In addition to this high frequency performance, the high two-dimensional electron gas (2DEG) density and critical electric field of AlGaN/GaN allow a 10-fold increase in the output power density of GaN RF power amplifiers and high voltage electronics, when compared to state-of-the-art GaAs and Si circuits. In this presentation, we will review recent GaN device technology for power and RF applications of ETRI.The better power and frequency handling capabilities, and higher thermal conductivity of wide bandgap semiconductors will give them significant advantage over classic semiconductors. Diamond with the highest thermal conductivity among broadband semiconductors is the most promising material as a thermal diffusion substrate for RF / power devices. For example, despite the maturity of GaN device technology, the heat generated during device operation is a limiting factor that maximizes the performance of GaN devices [3,4], but it can be overcome with high thermal conductivity diamond [3]. This presentation will also present recent research and development trends of GaN-on-Diamond semiconductor electronic devices.
KSP Keywords
300 GHz, Development trends, Diamond semiconductor, GaN device, GaN semiconductor, GaN-on-diamond, High Frequency(HF), High Voltage, High power applications, Limiting factor, Output power density
Copyright Policy
ETRI KSP Copyright Policy
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.