ETRI-Knowledge Sharing Plaform



논문 검색
구분 SCI
연도 ~ 키워드


학술지 2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
Cited 101 time in scopus Download 125 time Share share facebook twitter linkedin kakaostory
문재경, 조규준, 장우진, 정현욱, 도재원
ECS Journal of Solid State Science and Technology, v.8 no.7, pp.3079-3082
Electrochemical Society (ECS)
19PB3300, 저결함(1x104cm-2)특성의 고품위 Ga2O3 에피소재 및 1KV 이상의 항복전압을 가지는 전력소자 기술 개발, 문재경
We report on demonstrating high performance lateral 棺-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 × 1018 cm?닋3) 棺-Ga2O3 epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (Lgd) of 25 μm, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral 棺-Ga2O3 MOSFET with high VBR of more than 2 kV and the highest VBR attained among all the Ga2O3 MOSFETs. The breakdown voltages with different Lgd from 5??25 μm ranged from 518??2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral 棺-Ga2O3 MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV.
KSP 제안 키워드
Breakdown voltage(BDV), Channel layer, Fe-doped, Field Plate, Field-effect transistors(FETs), High performance, High-voltage and high-power, Linear trend, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Molecular beam epitaxy(MBE)
본 저작물은 크리에이티브 커먼즈 저작자 표시 (CC BY) 조건에 따라 이용할 수 있습니다.
저작자 표시 (CC BY)