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학술지 2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
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문재경, 조규준, 장우진, 정현욱, 도재원
ECS Journal of Solid State Science and Technology, v.8 no.7, pp.3079-3082
Electrochemical Society (ECS)
19PB3300, 저결함(1x104cm-2)특성의 고품위 Ga2O3 에피소재 및 1KV 이상의 항복전압을 가지는 전력소자 기술 개발, 문재경
We report on demonstrating high performance lateral 棺-Ga O metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 × 10 cm ) 棺-Ga O epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (L ) of 25 μm, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral 棺-Ga O MOSFET with high V of more than 2 kV and the highest V attained among all the Ga O MOSFETs. The breakdown voltages with different L from 5??25 μm ranged from 518??2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral 棺-Ga O MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV. 2 3 2 3 gd 2 3 BR BR 2 3 gd 2 3 18 ?닋3
KSP 제안 키워드
Breakdown voltage(BDV), Channel layer, Fe-doped, Field Plate, Field-effect transistors(FETs), High performance, High-voltage and high-power, Linear trend, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Molecular beam epitaxy(MBE)