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2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
- Authors
- Jae Kyoung Mun, Kyujun Cho, Woojin Chang, Hyun-Wook Jung, Jaewon Do
- Issue Date
- 2019-07
- Citation
- ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082
- ISSN
- 2162-8769
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on demonstrating high performance lateral 棺-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 × 1018 cm?닋3) 棺-Ga2O3 epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (Lgd) of 25 μm, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral 棺-Ga2O3 MOSFET with high VBR of more than 2 kV and the highest VBR attained among all the Ga2O3 MOSFETs. The breakdown voltages with different Lgd from 5??25 μm ranged from 518??2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral 棺-Ga2O3 MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV.
- KSP Keywords
- Breakdown Voltage, Channel layer, Fe-doped, Field Effect Transistor(FET), Field plate, High performance, High-voltage and high-power, Linear trend, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Molecular beam epitaxy(MBE)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
