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Conference Paper Schottky Barrier Height Modulation by ZnO Interlayer for High-Performance MoS2 Field-Effect Transistors

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Authors: Jisu Jang, Yunseob Kim, Gil-Ho Kim, Sun Jin Yun

Issue Date: 2019-11

Citation: International Conference on Advanced Electromaterials (ICAE) 2019, pp.1-1

Language: English

Type: Conference Paper

KSP Keywords: Barrier height modulation, Field-effect transistors(FETs), High performance, Schottky barrier height

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