상세정보
학술지
Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses
- 발행일
- 201907
- 출처
- Japanese Journal of Applied Physics, v.58 no.7, pp.1-5
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP)
- 협약과제
- 19ZB1800, 초박막 구조 기반 고성능 멤리스터 소자를 이용한 뉴로모픽 하드웨어 개발, 문승언
- 초록
- Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) capacitors using Al-doped HfO2 (Al:HfO2) ferroelectrics were proposed and the effects of O3 doses were investigated. The memory window (MW) increased with increasing the areal ratios of the MIS to the MFM (S I/S F) and the largest MW was obtained at the largest S I/S F for both devices prepared with O3 doses of 3 and 5 s. Contrarily, the retention of the device prepared with O3 dose of 3 s could be improved compared with the device prepared with longer O3 doses. Thus, the S I/S F and O3 doses could be suggested as critical control parameters for the Al:HfO2 MFMIS capacitors.
- KSP 제안 키워드
- Al-doped, Atomic Layer Deposition, Metal-insulator-semiconductor(MIS), Metal-insulator-semiconductor structures, control parameters, memory window, thin film(TF)