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Journal Article
Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses
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- Authors
- So-Yeong Na, So-Jung Yoon, Seung-Youl Kang, Seung-Eon Moon, Sung-Min Yoon
- Issue Date
- 2019-07
- Citation
- Japanese Journal of Applied Physics, v.58, no.7, pp.1-5
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP)
- Language
- English
- Type
- Journal Article
- Abstract
- Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) capacitors using Al-doped HfO2 (Al:HfO2) ferroelectrics were proposed and the effects of O3 doses were investigated. The memory window (MW) increased with increasing the areal ratios of the MIS to the MFM (S I/S F) and the largest MW was obtained at the largest S I/S F for both devices prepared with O3 doses of 3 and 5 s. Contrarily, the retention of the device prepared with O3 dose of 3 s could be improved compared with the device prepared with longer O3 doses. Thus, the S I/S F and O3 doses could be suggested as critical control parameters for the Al:HfO2 MFMIS capacitors.
- KSP Keywords
- Al-doped, Atomic Layer Deposition, Metal-insulator-semiconductor(MIS), Metal-insulator-semiconductor structures, control parameters, memory window, thin film(TF)