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Polarization Switching Kinetics of the Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic Layer Deposition with Different Ozone Doses
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- Authors
- So-Jung Yoon, So-Yeong Na, Seung-Eon Moon, Sung-Min Yoon
- Issue Date
- 2019-09
- Citation
- Journal of Vacuum Science and Technology B, v.37, no.5, pp.1-6
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Abstract
- Ferroelectric switching kinetics of the Al-doped HfO2 (Al:HfO2) thin films prepared by the atomic layer deposition process were investigated by varying the dose time of oxygen precursor (O3). When the O3 dose time was reduced to 3 s, the Al:HfO2 films exhibited an enhanced remnant polarization (2Pr) of 10.2 μC/cm2 due to the suppression of the monoclinic phase and the increase in the ratio of oxygen vacancy. Double-pulse switching and the Kolmogorov-Avrami-Ishibashi model were used to obtain detailed quantitative information on the switching kinetics of the Al:HfO2 films. The estimated values of switching time and activation energy showed the strong dependence of O3 dose. This suggests that the O3 dose condition can be a key control parameter to modulate the ferroelectric polarization switching dynamics of the Al:HfO2 thin films.
- KSP Keywords
- Activation Energy, Al-doped, Atomic Layer Deposition, Double-pulse, Kolmogorov-Avrami-Ishibashi model, Monoclinic phase, Oxygen vacancies, Quantitative information, Remnant polarization, Switching kinetics, Switching time