상세정보
학술지
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing
- 발행일
- 202002
- 출처
- IEEE Electron Device Letters, v.41 no.2, pp.232-235
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 19ZB1800, 초박막 구조 기반 고성능 멤리스터 소자를 이용한 뉴로모픽 하드웨어 개발, 문승언
- 초록
- HfZrOx (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited in various ways. Specifically, in sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization ( text {P}_{text {r}} ) is demonstrated using conventional rapid thermal annealing at high temperatures of at least 750 °C. Here we show that rapidly transited ferroelectric switching with a larger 2 Pr of 24mu C/cm2 is achieved by introducing a high pressure annealing (HPA) at even lower temperature of 550 °C. Our findings reveal that the HPA enhances the crystallinity of grains in the HZO, thereby enlarging the Pr and strengthening breakdown conditions. Through short pulse techniques, how interface and bulk region in the HZO are involved in the switching depending on the HPA is also investigated.
- KSP 제안 키워드
- High Temperature, High pressure annealing, Lower temperature, Pulse techniques, Remnant polarization, Short-pulse, Small remnant, Ultra-thin, ferroelectric switching, rapid thermal annealing(RTA), thin layer