ETRI-Knowledge Sharing Plaform

KOREAN

BROWSE

Titles

Home Titles Articles
논문 검색
Type SCI
Year ~ Keyword

Detail

List
Conference Paper Improvement of Proton Radiation Hardness through Bi-layer Gate Insulating System in GaN-based MIS-HEMTs
Cited - time in scopus Share share facebook twitter linkedin kakaostory
Authors
Sung-Jae Chang, Kyu-Jun Cho, Hyun-Wook Jung, Jeong-Jin Kim, Yoo Jin Jang, Sung-Bum Bae, Dong-Seok Kim, Youngho Bae, Hyung Sup Yoon, Hokyun Ahn, Byoung-Gue Min, Hae Cheon Kim, Jong-Won Lim
Issue Date
2019-07
Citation
Internatinoal Conference on Nitride Semiconductors (ICNS) 2019, pp.119-119
Language
English
Type
Conference Paper
KSP Keywords
Bi-layer, GaN-Based, proton radiation, radiation hardness
Copyright Policy Privacy Policy

218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, KOREA, Contact: sh.kim@etri.re.kr

2016 Electronics and Telecommunications Research Institute. All rights reserved.

Please refrain from automatic collection of e-mail addresses posted on this homepage.

제1유형