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Journal Article Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
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Authors
Sung-Jae Chang, Kyu Jun Cho, Hyun-Wook Jung, Jeong-Jin Kim, Yoo-Jin Jang, Sung-Bum Bae, Dong-Seok Kim, Youngho Bae, Hyung Sup Yoon, Ho-Kyun Ahn, Byoung-Gue Min, Haecheon Kim, Jong-Won Lim, Dong-Min Kang
Issue Date
2019-12
Citation
ECS Journal of Solid State Science and Technology, v.8, no.12, pp.245-248
ISSN
2162-8769
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/2.0251912jss
Abstract
The proton radiation hardness has been investigated in GaN-based MIS-HEMTs with various gate insulating systems. Through the pulsed mode measurements and carrier mobility extraction, we have revealed that the Coulomb scattering generated by the trapped charges inside of the gate insulating layer is a key device performance degradation factor. We also have found out that SiN/Al2O3 bi-layer gate insulating system exhibits stronger immunity to the proton radiation compared to the SiN single-layer gate insulating system since the dielectric layer quality of ALD deposited Al2O3 is better than that of PECVD deposited SiN layer. Our systematic research emphasizes that to employ an excellent quality dielectric layer such as Al2O3 is essential factor for the improvement of the proton radiation hardness in GaN-based MIS-HEMTs.
KSP Keywords
Bi-layer, Carrier mobility, Degradation factor, GaN-Based, Insulating layer, Key device, Pulsed mode, Single-layer, Trapped charge, coulomb scattering, device performance