본 연구에서 W-밴드 마이크로파 집적 회로 (MMICs) 제작을 위한 T 형 게이트 구조를 가지는 mHEMT 소자를 제작 하고 그 특성을 살펴보았다. MHEMT 디바이스를 제조하기 위해서, 게이트 금속 증착 전에 디바이스의 쇼트키 층을 에칭하는 리세스 프로세스를 적용하였으며, T-게이트 구조 형성을 위해서 3 중 포토 레지스트 필름을 사용하는 이빔 리소그래피가 사용되었다. W- 밴드 MMIC 설계에 사용할 수있는 특성을 확인하기 위해 제조 된 소자의 DC 및 RF 특성을 측정하였다. MHEMT 소자는 드레인 전류 밀도 747 mA/mm, 최대 트랜스 컨덕턴스 1.354 S/mm, 핀치 오프 전압 -0.42 V와 같은 DC 특성을 나타 내었다. 주파수 특성은 215 GHz의 차단 주파수와 260 GHz의 최대 발진 주파수 특성을 보였으며, W-대역 MMIC 설계 및 제작에 충분한 성능을 보였다. 또한 능동 및 수동 모델링을 수행하고 측정 결과와 비교하여 모델의 정확도를 평가하였다. 개발 된 mHEMT 및 모델은 W-밴드 MMIC 제작에 사용될 수 있을 것으로 기대된다.
KSP Keywords
W band
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