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Journal Article Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
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Authors
Hyun-Wook Jungy, Sung-Jae Chang, Ho-Kyun Ahn, Haecheon Kim, Jong-Won Lim, Jae-Won Do
Issue Date
2020-05
Citation
Journal of the Korean Physical Society, v.76, no.9, pp.837-842
ISSN
0374-4884
Publisher
한국물리학회
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.76.837
Project Code
20FU1100, Development of EHF 3D TIV integration process and InP/GaN device technology, Hokyun Ahn
Abstract
Ohmic contacts are formed by recess etching the source and the drain regions with line and dot patterns of a few hundred nanometers on an AlGaN/GaN heterostructure and treating the surface with tetramethylammonium hydroxide (TMAH) prior to ohmic metal deposition. Electrical characterizations show that ohmic behavior is obtained at a low annealing temperature of 700 ?뿦 C as the direct contact area to the two-dimensional electron gas (2DEG) is increased via the etched patterns, and the ohmic contact is further improved when the interface is treated with TMAH. The analyses based on transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, and atomic force microcopy confirm the presence of an improved ohmic contact interface and morphology, suggesting a novel and viable route towards the fabrication of AlGaN/GaN-based devices with improved controllability and reliability.
KSP Keywords
AlGaN/GaN heterostructure, Atomic force microcopy, Contact area, Contact interface, Dot pattern, Electrical characterization, GaN-Based, Low annealing temperature, Ohmic behavior, Ohmic contact, Ohmic metal