상세정보
학술지
Few-layer PdSe2-based Field-effect Transistor for Photodetector Applications
- 저자
- A.Venkatesan, Servin Rathi, 김윤섭, 김한울, 황동목, 윤선진, 김길호
- 발행일
- 202008
- 출처
- Materials Science in Semiconductor Processing, v.115, pp.1-7
- ISSN
- 1369-8001
- 출판사
- Elsevier
- 협약과제
- 19HB1100, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- We demonstrate a multilayer palladium diselenide (PdSe2) high-performance photodetector. The photodetector exhibits the photodetectivity of 0.15 × 1010 Jones under laser illumination ({\\lambda} = 655 nm and power of 0.057 mWmm?닋2). The negative threshold voltage shift in transfer characteristics upon laser illumination is mainly attributed to the photogating effect. Systematic analysis of experimental data indicates that the photogating effect and space charge limited conduction are simultaneously involved in the conduction mechanism. We observe that the photogenerated current increases logarithmically as the light intensity increases, and it persists (~200 s) even after stopping the illumination. The slow decrease in current was attributed to the trapping of photogenerated charge carriers at the PdSe2/SiO2 interface and the defects in the structure of PdSe2. We also observe a reproducible and stable time-resolved photoresponse with respect to the incident laser power. We believe that this study can be an important source of information and can help researchers to continue to investigate methods that would allow them to maximise the potential of PdSe2 for photodetector applications.
- KSP 제안 키워드
- 5 nm, Charge carriers, Experimental Data, Field-effect transistors(FETs), High performance, Laser illumination, Space charge limited(SCL), Space charge limited conduction, Systematic analysis, Threshold voltage shift, Time-resolved