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Few-layer PdSe2-based Field-effect Transistor for Photodetector Applications
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- Authors
- A. Venkatesan, Servin Rathi, Yunseob Kim, Hanul Kim, Dongmok Whang, Sun Jin Yun, Gil-Ho Kim
- Issue Date
- 2020-08
- Citation
- Materials Science in Semiconductor Processing, v.115, pp.1-7
- ISSN
- 1369-8001
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate a multilayer palladium diselenide (PdSe2) high-performance photodetector. The photodetector exhibits the photodetectivity of 0.15 × 1010 Jones under laser illumination ({\\lambda} = 655 nm and power of 0.057 mWmm?닋2). The negative threshold voltage shift in transfer characteristics upon laser illumination is mainly attributed to the photogating effect. Systematic analysis of experimental data indicates that the photogating effect and space charge limited conduction are simultaneously involved in the conduction mechanism. We observe that the photogenerated current increases logarithmically as the light intensity increases, and it persists (~200 s) even after stopping the illumination. The slow decrease in current was attributed to the trapping of photogenerated charge carriers at the PdSe2/SiO2 interface and the defects in the structure of PdSe2. We also observe a reproducible and stable time-resolved photoresponse with respect to the incident laser power. We believe that this study can be an important source of information and can help researchers to continue to investigate methods that would allow them to maximise the potential of PdSe2 for photodetector applications.
- KSP Keywords
- 5 nm, Charge carriers, Experimental data, Field Effect Transistor(FET), High performance, Laser power, Light intensity, Space charge limited(SCL), Space charge limited conduction, Systematic analysis, Threshold voltage shift