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학술지 Thin-film Transistor-driven Vertically Stacked Full-color Organic Light-emitting Diodes for High-resolution Active-matrix Displays
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저자
최수경, 강찬모, 변춘원, 조현수, 권병화, 한준한, 양종헌, 신진욱, 황치선, 조남성, 이강미, 김희옥, 김응준, 유승협, 이현구
발행일
202006
출처
Nature Communications, v.11, pp.1-9
ISSN
2041-1723
출판사
Nature Research
DOI
https://dx.doi.org/10.1038/s41467-020-16551-8
협약과제
20ZB1100, ICT 창의기술 개발, 백용순
초록
Thin-film transistor (TFT)-driven full-color organic light-emitting diodes (OLEDs) with vertically stacked structures are developed herein using photolithography processes, which allow for high-resolution displays of over 2,000 pixels per inch. Vertical stacking of OLEDs by the photolithography process is technically challenging, as OLEDs are vulnerable to moisture, oxygen, solutions for photolithography processes, and temperatures over 100 °C. In this study, we develop a low-temperature processed Al2O3/SiNx bilayered protection layer, which stably protects the OLEDs from photolithography process solutions, as well as from moisture and oxygen. As a result, transparent intermediate electrodes are patterned on top of the OLED elements without degrading the OLED, thereby enabling to fabricate the vertically stacked OLED. The aperture ratio of the full-color-driven OLED pixel is approximately twice as large as conventional sub-pixel structures, due to geometric advantage, despite the TFT integration. To the best of our knowledge, we first demonstrate the TFT-driven vertically stacked full-color OLED.
KSP 제안 키워드
Aperture ratio, High-resolution displays, Low temperature(LT), Organic light-emitting diodes(OLEDS), Photolithography process, Protection layer, Sub-pixel, Thin-Film Transistor(TFT), full color, intermediate electrodes, light-emitting diode(LED)
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