상세정보
학술지
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
- 발행일
- 202007
- 출처
- Journal of the Korean Physical Society, v.77 no.2, pp.122-126
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 19HB2900, 미세공정 화합물 반도체 기반 밀리미터파 대역 5G 부품기술 개발, 강동민
- 초록
- In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes.
- KSP 제안 키워드
- Channel current, Channel layer, Citric acid, Drain current, Electrochemical potential, Epitaxial layers, Etch rates, Etching solution, Gate recess, High electron mobility transistor(HEMT), InAlAs/InGaAs mHEMT