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Journal Article Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS2 with Vertically Aligned Nanoflakes
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Authors
Bok Ki Min, Van-Tam Nguyen, Seong Jun Kim, Yoonsik Yi, Choon-Gi Choi
Issue Date
2020-03
Citation
ACS Applied Materials & Interfaces, v.12, no.12, pp.14476-14483
ISSN
1944-8244
Publisher
American Chemical Society (ACS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1021/acsami.9b18148
Abstract
The development of MoS2 with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS2 layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS2 (SL-MoS2) with vertically aligned nanoflakes grown by a CVD process. Treatment with oxygen plasma results in the formation of a substoichiometric phase of MoOx in the vertical nanoflakes, which exhibit a high electron density of 4.5 × 1013 cm-2. The substoichiometric MoOx with a high electron-doping level that is locally present on the SL-MoS2 surface induces an absorption band in the near-infrared (NIR) wavelength range of 1000-1750 nm because of the plasmon resonances. Finally, we demonstrate the enhancement of photodetection ability by broadening the detection range from the visible region to the NIR region in oxygen-treated SL-MoS2 with vertically aligned nanoflakes.
KSP Keywords
Absorption band, Active sites, CVD process, Chemical Vapor Deposition, Electrochemical applications, Electron density, Electron-doping, High electron, Light absorption, Near-infrared absorption, Spectral light