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Conference Paper
Unmanned Aerial Vehicle Identification Success Probability with LoRa Communication Approach
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- Authors
- Jinhyung Oh, Dong-Woo Lim, Kyu-Min Kang
- Issue Date
- 2020-09
- Citation
- International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) 2020, pp.1-6
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- The impact of the passivation system on the device performance has been studied in GaN-based MIS-HEMTs using SiN/Al2O3 bi-layered passivation. The deposition of SiN and Al2O3 passivation layer induced the compressive and tensile stress on GaN channel layer, respectively. Through the Al2O3 deposition on top of SiN layer, the mechanical stress and device characteristics were modulated. The device properties such as carrier mobility and concentration at the hetero-interface were ameliorated when the slight tensile stress was applied on the GaN channel compared to the compressive stress. The proton radiation hardness corresponding to the passivation system was also researched. The SiN/Al2O3 passivation system exhibited stronger immunity to the proton radiation than that of SiN passivation due to the superior dielectric quality of Al2O3. These results highlight that the SiN/Al2O3 bi-layered passivation is promising technique for the optimization of the device performance and improvement of proton radiation hardness in GaN-based MIS-HEMTs.
- KSP Keywords
- Carrier mobility, Channel layer, Compressive stress, Device characteristics, Device properties, GaN-Based, Hetero-interface, SiN Passivation, Success probability, Tensile stress, Vehicle identification