상세정보
학술지
W-Band MMIC Chipset in 0.1-μm mHEMT Technology
- 발행일
- 202008
- 출처
- ETRI Journal, v.42 no.4, pp.549-561
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 20NB1100, W-대역 탐지용 송수신기 집적화 기술을 위한 W-대역 MMIC Chip 및 공정개발, 강동민
- 초록
- We developed a 0.1-μm metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747혻mA/mm and a maximum transconductance of 1.354혻S/mm; the RF characteristics were a cutoff frequency of 210혻GHz and a maximum oscillation frequency of 252혻GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0혻dBm) in the 94혻GHz??108혻GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20혻dB in a band between 83혻GHz and 110혻GHz and a noise figure lower than 3.8혻dB with a frequency of 94혻GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13혻dB??17혻dB for RF frequencies of 80혻GHz??110혻GHz and image-rejection ratios of 17혻dB??19혻dB for RF frequencies of 93혻GHz??100혻GHz.
- KSP 제안 키워드
- Conversion gain, Cut-off frequency, DC Characteristics, Drain current, Frequency Multiplier, High electron mobility transistor(HEMT), Input signal, Microwave monolithic integrated circuits(MMIC), Noise Figure(NF), RF characteristics, Single-Ended
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