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Boron 확산공정을 이용한 5,000V, 4인치 광 사이리스터의 제작 및 특성 평가
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- Issue Date
- 2019-12
- Citation
- 전력전자학회논문지, v.24, no.6, pp.411-418
- ISSN
- 1229-2214
- Publisher
- 전력전자학회
- Language
- Korean
- Type
- Journal Article
- Abstract
- Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (VDRM) of 6,500 V. They drove an average on-state current (ITAVM) of 2,270 A, peak nonrepetitive surge current (ITSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I2T) of 17 MA2s without damage to the device.
- KSP Keywords
- 5 nm, Blocking voltage, Breakover diode, Critical rate, Diffusion process, Doping concentration, Edge termination, HVDC Transmission, High power applications, Ion implantation, Rate of Rise