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Transparent Phototransistor with High Responsivity, Sensitivity, and Detectivity from Heterojunction Metal Oxide Semiconductors
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- Authors
- Jongchan Lee, Hee-Ok Kim, Jae-Eun Pi, Sooji Nam, Seung-Youl Kang, Kwang-Ho Kwon, Sung Haeng Cho
- Issue Date
- 2020-09
- Citation
- Applied Physics Letters, v.117, no.11, pp.1-5
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V쨌s and an excellent high photoresponsivity of 25 000 A/W, a photosensitivity of 3.3 × 107, a specific detectivity of 4.3 × 1017 cm쨌Hz1/2쨌W-1 under the illumination at 460 nm with an intensity of 140 μW/cm2. The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gate bias with 1 μs, which accelerates the recombination of photogenerated holes with electrons. This demonstrates that the transparent photosensor array can be integrated monolithically on the display without appreciable loss of transparency for high functionality such as large area image sensor.
- KSP Keywords
- 460 nm, High performance, Metal-oxide(MOX), Photogenerated holes, Thin-film phototransistors(TFPT), Tri-layer, gate bias, high field-effect mobility, high photoresponsivity, high responsivity, image sensor