상세정보
학술지
Transparent Phototransistor with High Responsivity, Sensitivity, and Detectivity from Heterojunction Metal Oxide Semiconductors
- 발행일
- 202009
- 출처
- Applied Physics Letters, v.117 no.11, pp.1-5
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 20PB1900, 자유곡면 자동차 윈도우용 해상도 200ppi 이상 투명도 70% 이상 능동구동형 Micro-LED 디스플레이 핵심 기술 개발, 구재본
- 초록
- In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V쨌s and an excellent high photoresponsivity of 25 000 A/W, a photosensitivity of 3.3 × 107, a specific detectivity of 4.3 × 1017 cm쨌Hz1/2쨌W-1 under the illumination at 460 nm with an intensity of 140 μW/cm2. The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gate bias with 1 μs, which accelerates the recombination of photogenerated holes with electrons. This demonstrates that the transparent photosensor array can be integrated monolithically on the display without appreciable loss of transparency for high functionality such as large area image sensor.
- KSP 제안 키워드
- 460 nm, High performance, Image Sensor, Metal-oxide(MOX), Photo-generated holes, Thin-film phototransistors(TFPT), Tri-layer, gate bias, high field-effect mobility, high photoresponsivity, high responsivity