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Journal Article Transparent Phototransistor with High Responsivity, Sensitivity, and Detectivity from Heterojunction Metal Oxide Semiconductors
Cited 15 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Jongchan Lee, Hee-Ok Kim, Jae-Eun Pi, Sooji Nam, Seung-Youl Kang, Kwang-Ho Kwon, Sung Haeng Cho
Issue Date
2020-09
Citation
Applied Physics Letters, v.117, no.11, pp.1-5
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/5.0014562
Abstract
In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V쨌s and an excellent high photoresponsivity of 25 000 A/W, a photosensitivity of 3.3 × 107, a specific detectivity of 4.3 × 1017 cm쨌Hz1/2쨌W-1 under the illumination at 460 nm with an intensity of 140 μW/cm2. The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gate bias with 1 μs, which accelerates the recombination of photogenerated holes with electrons. This demonstrates that the transparent photosensor array can be integrated monolithically on the display without appreciable loss of transparency for high functionality such as large area image sensor.
KSP Keywords
460 nm, High performance, Metal-oxide(MOX), Photogenerated holes, Thin-film phototransistors(TFPT), Tri-layer, gate bias, high field-effect mobility, high photoresponsivity, high responsivity, image sensor