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학술지 Transparent Phototransistor with High Responsivity, Sensitivity, and Detectivity from Heterojunction Metal Oxide Semiconductors
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저자
이종찬, 김희옥, 피재은, 남수지, 강승열, 권광호, 조성행
발행일
202009
출처
Applied Physics Letters, v.117 no.11, pp.1-5
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/5.0014562
협약과제
20PB1900, 자유곡면 자동차 윈도우용 해상도 200ppi 이상 투명도 70% 이상 능동구동형 Micro-LED 디스플레이 핵심 기술 개발, 구재본
초록
In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V쨌s and an excellent high photoresponsivity of 25 000 A/W, a photosensitivity of 3.3 × 107, a specific detectivity of 4.3 × 1017 cm쨌Hz1/2쨌W-1 under the illumination at 460 nm with an intensity of 140 μW/cm2. The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gate bias with 1 μs, which accelerates the recombination of photogenerated holes with electrons. This demonstrates that the transparent photosensor array can be integrated monolithically on the display without appreciable loss of transparency for high functionality such as large area image sensor.
KSP 제안 키워드
460 nm, High performance, Image Sensor, Metal-oxide(MOX), Photo-generated holes, Thin-film phototransistors(TFPT), Tri-layer, gate bias, high field-effect mobility, high photoresponsivity, high responsivity