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1700 V Full-SiC Half-bridge Power Module with Low Switching Loss
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- Authors
- Dong Yun Jung, Hyun Gyu Jang, Doohyung Cho, Kun Sik Park, Jong-Won Lim, Joung Hwan Bae, Yun Hwa Choi
- Issue Date
- 2020-09
- Citation
- Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A 1700 V/200 A half-bridge power module with silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) was researched and developed. Two direct bonded copper (DBC) substrates are interconnected by copper-based clips with width of 6 mm and thickness of 0.8 mm. The DBC substrate and terminals are interconnected by lead free solder alloy. Static and switching characteristics of the power module were tested. The measured turn-on and turn-off switching energies were 20.15 mJ and 3.98 mJ, respectively. We designed and implemented the evaluation circuit board to measure and extract the stray inductance of the module. The extracted stray inductance of the power module was 13.4 nH. Three reliability tests such as high-temperature storage life (HTSL) of 150°C, temperature humidity bias (THB) of 85°C / 85% RH and thermal cycling (TC) of -65~150°C were evaluated. After the reliability tests, the rate of changes of forward current at the same condition was less than 11.98%.
- KSP Keywords
- 700 V, Circuit Board, DBC substrate, Direct bonded copper(DBC), Field Effect Transistor(FET), Forward current, High temperature storage, Lead free solder alloy, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Reliability test