상세정보
학술대회
Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
- 발행일
- 202010
- 출처
- PRiME 2020 (ECS Transactions 98), v.98 no.5, pp.519-526
- 협약과제
- 19VU1700, 국방 무기체계용 핵심 반도체 부품 자립화 플랫폼 개발, 임종원
- 초록
- The impact of the passivation system on the device performance has been studied in GaN-based MIS-HEMTs using SiN/Al2O3 bi-layered passivation. The deposition of SiN and Al2O3 passivation layer induced the compressive and tensile stress on GaN channel layer, respectively. Through the Al2O3 deposition on top of SiN layer, the mechanical stress and device characteristics were modulated. The device properties such as carrier mobility and concentration at the hetero-interface were ameliorated when the slight tensile stress was applied on the GaN channel compared to the compressive stress. The proton radiation hardness corresponding to the passivation system was also researched. The SiN/Al2O3 passivation system exhibited stronger immunity to the proton radiation than that of SiN passivation due to the superior dielectric quality of Al2O3. These results highlight that the SiN/Al2O3 bi-layered passivation is promising technique for the optimization of the device performance and improvement of proton radiation hardness in GaN-based MIS-HEMTs.
- KSP 제안 키워드
- Carrier mobility, Channel layer, Compressive stress, Device characteristics, Device properties, GaN-Based, Hetero-interface, Radiation hardness, SiN Passivation, Tensile stress, device performance