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Conference Paper Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
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Authors
Sung-Jae Chang, Hyun-Wook Jung, Kyu Jun Cho, Soo Cheol Kang, Youn Sub NOH, Sang-Heung Lee, Seong-il Kim, Hae Cheon Kim, Hokyun Ahn, Jong-Won Lim
Issue Date
2020-10
Citation
PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1149/09805.0519ecst
Project Code
19VU1700, Development of self-reliance platform in defense advanced semiconductor materials and components for weapon system, Jong-Won Lim
Abstract
The impact of the passivation system on the device performance has been studied in GaN-based MIS-HEMTs using SiN/Al2O3 bi-layered passivation. The deposition of SiN and Al2O3 passivation layer induced the compressive and tensile stress on GaN channel layer, respectively. Through the Al2O3 deposition on top of SiN layer, the mechanical stress and device characteristics were modulated. The device properties such as carrier mobility and concentration at the hetero-interface were ameliorated when the slight tensile stress was applied on the GaN channel compared to the compressive stress. The proton radiation hardness corresponding to the passivation system was also researched. The SiN/Al2O3 passivation system exhibited stronger immunity to the proton radiation than that of SiN passivation due to the superior dielectric quality of Al2O3. These results highlight that the SiN/Al2O3 bi-layered passivation is promising technique for the optimization of the device performance and improvement of proton radiation hardness in GaN-based MIS-HEMTs.
KSP Keywords
Carrier mobility, Channel layer, Compressive stress, Device characteristics, Device properties, GaN-Based, Hetero-interface, Radiation hardness, SiN Passivation, Tensile stress, device performance