상세정보
학술대회
Multi-layer Ceramic based Surface Mount Device Packaging for 1200 V and 1700 V SiC SBD Power Semiconductors
- 발행일
- 202011
- 출처
- International Conference on Consumer Electronics (ICCE) 2020 : Asia, pp.603-606
- 협약과제
- 20PU1200, 1700V/250A급 저손실 Full-SiC Half-bridge Power Module 개발, 정동윤
- 초록
- We propose a multi-layer ceramic based surface mount device (SMD) packaging for 1200 V and 1700 V silicon carbide (SiC) Schottky barrier diode (SBD) power semiconductors. The distance between anode and cathode on a ceramic substrate is 1.0 mm to achieve an isolation voltage performance over 2000 V. We implemented the proposed multi-layer ceramic based substrates with 8 mm x 8 mm size. Using the substrates, we fabricated three SMD typed power semiconductor packaging such as 1200 V/2 A, 1200 V/5 A, and 1700 V/5 A-class SiC SBD and evaluated forward/reverse static and dynamic performances. It is the world's first result of SMD packaging using a multi-layer ceramic substrate for 1200 and 1700 V SiC SBD.
- KSP 제안 키워드
- 1200 V, 700 V, Anode and cathode, Ceramic Substrate, Device packaging, Power semiconductor, Semiconductor packaging, SiC SBD, Static and dynamic performances, Surface mount device, Voltage performance