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학술대회 Multi-layer Ceramic based Surface Mount Device Packaging for 1200 V and 1700 V SiC SBD Power Semiconductors
Cited 3 time in scopus Download 6 time Share share facebook twitter linkedin kakaostory
저자
정동윤, 장현규, 조두형, 박건식, 임종원, 최윤화, 이용하
발행일
202011
출처
International Conference on Consumer Electronics (ICCE) 2020 : Asia, pp.603-606
DOI
https://dx.doi.org/10.1109/ICCE-Asia49877.2020.9276963
협약과제
20PU1200, 1700V/250A급 저손실 Full-SiC Half-bridge Power Module 개발, 정동윤
초록
We propose a multi-layer ceramic based surface mount device (SMD) packaging for 1200 V and 1700 V silicon carbide (SiC) Schottky barrier diode (SBD) power semiconductors. The distance between anode and cathode on a ceramic substrate is 1.0 mm to achieve an isolation voltage performance over 2000 V. We implemented the proposed multi-layer ceramic based substrates with 8 mm x 8 mm size. Using the substrates, we fabricated three SMD typed power semiconductor packaging such as 1200 V/2 A, 1200 V/5 A, and 1700 V/5 A-class SiC SBD and evaluated forward/reverse static and dynamic performances. It is the world's first result of SMD packaging using a multi-layer ceramic substrate for 1200 and 1700 V SiC SBD.
KSP 제안 키워드
1200 V, 700 V, Anode and cathode, Ceramic Substrate, Device packaging, Power semiconductor, Semiconductor packaging, SiC SBD, Static and dynamic performances, Surface mount device, Voltage performance