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Journal Article
Work Function Tuning of Zinc-Tin Oxide Thin Films Using High-Density O2 Plasma Treatment
- Authors
- Young-Hee Joo, Jae-Hyung Wi, Woo-Jung Lee, Yong-Duck Chung, Dae-Hyung Cho, Saewon Kang, Doo-Seung Um, Chang-Il Kim
- Issue Date
- 2020-11
- Citation
- Coatings, v.10, no.11, pp.1-9
- ISSN
- 2079-6412
- Publisher
- MDPI
- Language
- English
- Type
- Journal Article
- Abstract
- Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc's relationship from transmittance data. The work function of Zn0.6 Sn0.4 O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6 Sn0.4 O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells.
- KSP Keywords
- 65 nm, High performance, High-density, Metal-semiconductor, Optical band gap, Plasma treatment technique, Potential barrier, Smooth morphology, Solar Cells, Thin-Film Transistor(TFT), Tin oxide thin films
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
